| 释义 |
floating gate avalanche injection MOS
浮栅雪崩注入型MOS
In microelectronics, a type of programmable readonly memory using storage cells similar to field effect transistors. An applied voltage produces a static charge, which allows the storage cell to conduct during the read action, for a 1 bit. Exposure to ultraviolet light enables the charge to leak away thus permitting reprogramming.
微电子学中的一种可编程只读存储器,使用的是类似于场效应晶体管的存储元件。所加 电压产生静电荷,使存储元件在读期间导电,认为是二进制位1。在紫外线下曝光可使电荷漏 泄,从而允许再次编程。 |